Iranian PhD Student Designs 3 New Structures of Transistors in Nanometer Size
“In this research, with the help of different ideas, new structures of the TFET device were presented to improve the performance of the device in terms of DC characteristics and high frequency parameters,” Melissa Ebrahimnia, a PhD student in electrical and electronic engineering at Islamic Azad University’s Rasht branch, told ANA.
She explained that in this research, the effect of pollution engineering in the inner region of the U-shaped TFET structure was investigated, adding that the drainage area is divided into two parts, an area with heavy pollution on top of an area with light pollution.
“This increases the tunneling barrier at the channel-drain junction. Increasing the barrier’s width reduces the ambipolar current significantly but this pollution engineering has no effect on the lighting flow,” Ebrahimnia said.
“Then the effect of gate work function on DC characteristics and high frequency performance was investigated. The use of small work function for the source-side gate increases the current of light due to the reduction of the tunneling barrier at the channel-source interface, while the use of the small work function for the drain-side gate increases the ambipolar current due to the widening of the tunneling barrier at the channel-source interface.”
“As a result, the threshold voltage, the slope below the turn-off current, the transition conductance of the gate capacitor to the source cutoff frequency and the gain product in the bandwidth were improved, and metal implantation in the source side oxide increases the energy band level in the source region, and as a result, the width of the tunneling barrier at the junction of the source canal becomes narrower which leads to an increase in the luminous flux,” she noted.
Transistors are the fundamental building blocks of most electronics, including all computers and radios. A nanotransistor is a transistor whose dimensions are measured in nanometers. For instance, a transistor with a diameter of 300 nanometers (billionths of a meter) would be a nanotransistor.
Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors, more commonly known as computers. Computing and communications companies invest hundreds of millions of dollars in research funds every year to develop smaller transistors.
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